Datasheet > FQPF12N60C

FQPF12N60C

更新时间： 2024-11-16 12:05:07

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲 PC 局域网
页数	文件大小	规格书
9页	1074K
描述
600V N-Channel MOSFET

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数据手册

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FQPF12N60C 数据手册

FQP12N60C/FQPF12N60C

600V N-Channel MOSFET

General Description

Features

•

12A, 600V, R

= 0.65Ω @V = 10 V

DS(on) GS

These N-Channel enhancement mode power field effect

transistors are produced using Corise Semiconductorÿs proprietary,

planar stripe, DMOS technology.

Low gate charge ( typical 48 nC)

Low Crss ( typical 21 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

●

◀

▲

●

TO-220F

FQPF Series

TO-220

FQP Series

G D

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQP12N60C

FQPF12N60C

600

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

7.4

12 *

7.4 *

48 *

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

870

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

22.5

4.5

V/ns

dv/dt

Power Dissipation (T = 25°C)

225

- Derate above 25°C

Operating and Storage Temperature Range

1.78

0.41

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

FQP12N60C

0.56

FQPF12N60C

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

2.43

θJC

0.5

θJS

62.5

θJA

12 3 4 5 6 7...9

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