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FQPF13N10L PDF预览

FQPF13N10L

更新时间: 2024-11-15 22:25:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 556K
描述
100V LOGIC N-Channel MOSFET

FQPF13N10L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220F包装说明:TO-220F, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.68
雪崩能效等级(Eas):95 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):8.7 A最大漏极电流 (ID):8.7 A
最大漏源导通电阻:0.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):30 W
最大脉冲漏极电流 (IDM):34.8 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQPF13N10L 数据手册

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December 2000  
TM  
QFET  
FQPF13N10L  
100V LOGIC N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
8.7A, 100V, R  
= 0.18@V = 10 V  
DS(on) GS  
Low gate charge ( typical 8.7 nC)  
Low Crss ( typical 20 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology is especially tailored to minimize  
on-state  
resistance,  
provide  
superior  
switching  
performance, and withstand high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for low voltage applications such as high  
efficiency switching DC/DC converters, and DC motor  
control.  
175°C maximum junction temperature rating  
D
!
"
! "  
"
!
G
"
G D  
S
TO-220F  
FQPF Series  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQPF13N10L  
Units  
V
V
I
Drain-Source Voltage  
100  
8.7  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
6.15  
34.8  
± 20  
95  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
8.7  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
3.0  
mJ  
V/ns  
W
AR  
dv/dt  
6.0  
P
Power Dissipation (T = 25°C)  
30  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.2  
W/°C  
°C  
T , T  
-55 to +175  
J
STG  
Maximum lead temperature for soldering purposes,  
1/8from case for 5 seconds  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Typ  
Max  
5.0  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
--  
--  
θJC  
θJA  
62.5  
©2000 Fairchild Semiconductor International  
Rev. A4, December 2000  

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