FQPF13N50

更新时间： 2024-11-15 22:14:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	882K
描述
500V N-Channel MOSFET

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中文翻译

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数据手册

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FQPF13N50 数据手册

QFET

FQP13N50/FQPF13N50

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply, power

factor correction, electronic lamp ballast based on half

bridge.

•

12.5A, 500V, R

= 0.43Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 45 nC)

Low Crss ( typical 25 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

TO-220F

FQPF Series

TO-220

FQP Series

G D

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQP13N50

FQPF13N50

Units

Drain-Source Voltage

500

DSS

- Continuous (T = 25°C)

Drain Current

12.5

7.9

12.5 *

7.9 *

50 *

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

810

12.5

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

4.5

Power Dissipation (T = 25°C)

170

- Derate above 25°C

Operating and Storage Temperature Range

1.35

0.45

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

FQP13N50

FQPF13N50

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.74

0.5

2.23

θJC

θCS

Rev. B, September 2002

12 3 4 5 6 7...10

中文翻译

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