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FQPF12N60T PDF预览

FQPF12N60T

更新时间: 2024-11-16 12:01:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 555K
描述
600V N-Channel MOSFET

FQPF12N60T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220F包装说明:TO-220F, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.15
Is Samacsys:N雪崩能效等级(Eas):790 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):5.8 A
最大漏极电流 (ID):5.8 A最大漏源导通电阻:0.7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):55 W最大脉冲漏极电流 (IDM):23 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQPF12N60T 数据手册

 浏览型号FQPF12N60T的Datasheet PDF文件第2页浏览型号FQPF12N60T的Datasheet PDF文件第3页浏览型号FQPF12N60T的Datasheet PDF文件第4页浏览型号FQPF12N60T的Datasheet PDF文件第5页浏览型号FQPF12N60T的Datasheet PDF文件第6页浏览型号FQPF12N60T的Datasheet PDF文件第7页 
April 2000  
TM  
QFET  
FQPF12N60  
600V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supply.  
5.8A, 600V, R  
= 0.7 @ V = 10 V  
DS(on) GS  
Low gate charge ( typical 42 nC)  
Low Crss ( typical 25 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
"
! "  
"
G !  
"
G D  
S
TO-220F  
FQPF Series  
!
S
Absolute Maximum Ratings  
 
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQPF12N60  
Units  
V
V
I
Drain-Source Voltage  
600  
5.8  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
3.7  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
23  
A
DM  
V
E
I
Gate-Source Voltage  
±30  
790  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
5.8  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
5.5  
mJ  
AR  
dv/dt  
4.5  
Vns  
W
P
Power Dissipation (T = 25°C)  
55  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.44  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.27  
62.5  
Units  
°CW  
°CW  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
θ
θ
JC  
JA  
--  
©2000 Fairchild Semiconductor International  
Rev. A, April 2000  

FQPF12N60T 替代型号

型号 品牌 替代类型 描述 数据表
FQPF12N60 FAIRCHILD

完全替代

600V N-Channel MOSFET
FQPF12N60C FAIRCHILD

类似代替

FQP12N60C/FQPF12N60C
STP10NK60ZFP STMICROELECTRONICS

功能相似

N-CHANNEL 600V-0.65ohm-10A TO-220/FP/D2PAK/I2

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