FQPF12P20

更新时间： 2024-11-15 22:25:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	633K
描述
200V P-Channel MOSFET

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数据手册

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FQPF12P20 数据手册

May 2000

QFET

FQPF12P20

200V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters.

•

-7.3A, -200V, R

= 0.47Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 31 nC)

Low Crss ( typical 30 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

▶

▲

●

G D

TO-220F

FQPF Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQPF12P20

-200

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

-7.3

- Continuous (T = 100°C)

-4.6

(Note 1)

Drain Current

- Pulsed

-29.2

± 30

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

810

-7.3

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.0

V/ns

dv/dt

-5.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.4

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

2.5

θJC

θJA

62.5

Rev. B, May 2000

12 3 4 5 6 7 8

中文翻译

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