FQPF12N60CT

更新时间： 2024-09-29 03:39:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	805K
描述
600V N-Channel MOSFET

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数据手册

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FQPF12N60CT 数据手册

September 2006

QFET

FQPF12N60CT

600V N-Channel MOSFET

Features

Description

•

12A, 600V, R_DS(on)= 0.65Ω @V_GS= 10 V

Low gate charge ( typical 48 nC)

Low Crss ( typical 21 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

TO-220F Potted

FQPF Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FQPF12N60CT

Units

V_DSS

I_D

Drain-Source Voltage

600

12*

Drain Current

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

7.4*

(Note 1)

I_DM

Drain Current

48*

V_GSS

E_AS

I_AR

Gate-Source Voltage

± 30

870

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

5.1

V/ns

4.5

- Derate above 25°C

0.41

-55 to +150

W/°C

°C

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

FQPF12N60CT

Units

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

2.43

62.5

Thermal Resistance, Junction-to-Ambient

°C/W

FQPF12N60CT Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

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