FQPF12N60C-G

更新时间： 2024-09-29 13:07:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	551K
描述
Transistor

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中文翻译

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技术参数
数据手册

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FQPF12N60C-G 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

FQPF12N60C-G 数据手册

April 2000

QFET

FQPF12N60

600V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

•

5.8A, 600V, R

= 0.7 Ω @ V = 10 V

DS(on) GS

Low gate charge ( typical 42 nC)

Low Crss ( typical 25 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

G !

G D

TO-220F

FQPF Series

Absolute Maximum Ratings

ꢀꢀ

T = 25°C unless otherwise noted

Symbol

Parameter

FQPF12N60

Units

Drain-Source Voltage

600

5.8

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

3.7

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

±ꢀ30

790

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

5.8

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.5

dv/dt

4.5

Vꢀns

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.44

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8ꢁ from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.27

62.5

Units

°CꢁW

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Rev. A, April 2000

12 3 4 5 6 7 8

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