FQD2N50B

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	599K
描述
500V N-Channel MOSFET

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中文翻译

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数据手册
替代型号

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FQD2N50B 数据手册

May 2000

QFET

FQD2N50B / FQU2N50B

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply, power

factor correction, electronic lamp ballast based on half

bridge.

•

1.6A, 500V, R

= 5.3Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 6.0 nC)

Low Crss ( typical 4.0 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

I-PAK

FQU Series

D-PAK

FQD Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQD2N50 / FQU2N50

Units

Drain-Source Voltage

500

1.6

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

1.0

(Note 1)

Drain Current

- Pulsed

6.4

Gate-Source Voltage

± 30

120

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

1.6

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

3.0

V/ns

dv/dt

4.5

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.24

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

4.17

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, May 2000

12 3 4 5 6 7...9

中文翻译

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FQD2N50B 替代型号

型号	品牌	替代类型	描述	数据表
2SJ1151STR-E	RENESAS	功能相似	Silicon N Channel MOS FET

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