Datasheet > FQD2N60C

FQD2N60C

更新时间： 2024-09-24 12:34:23

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	842K
描述
N-Channel QFET MOSFET

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数据手册

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FQD2N60C 数据手册

FQD2N60C / FQU2N60C

N-Channel QFET^®MOSFET

600 V, 1.9 A, 4.7 Ω

Features

Description

These N-Channel enhancement mode power field effect

transistors are produced using Corise Semiconductorÿs proprietary,

planar stripe, DMOS technology.

• 1.9 A, 600 V, R

= 4.7 Ω (Max.) @ V = 10 V,

DS(on)

I_D= 0.95 A

•

Low Gate Charge (Typ. 8.5 nC)

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

Low Crss (Typ. 4.3 pF)

100% Avalanche Tested

RoHS Compliant

suited for high efficiency switch mode power supply.

●

◀

▲

●

I-PAK

D-PAK

Absolute Maximum Ratings

Symbol

Parameter

FQD2N60C / FQU2N60C

Unit

Drain-Source Voltage

600

1.9

DSS

Drain Current

- Continuous (T = 25°C)

- Continuous (T = 100°C)

1.14

7.6

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

120

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

1.9

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.4

V/ns

dv/dt

4.5

Power Dissipation (T = 25°C)*

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.35

-55 to +150

300

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Unit

°C/W

FQD2N60C / FQU2N60C

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient, Max.

2.87

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

www.kersemi.com

12 3 4 5 6 7 8

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FQD2N60CTM	FAIRCHILD	获取价格	N-Channel QFETÂ® MOSFET
FQD2N60CTM	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，600 V，1.9 A，4.7 Ω，DPAK
FQD2N60CTM_WS	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Met
FQD2N60CTM-WS	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，600 V，1.9 A，4.7 Ω，DPAK
FQD2N60TF	ROCHESTER	获取价格	2A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD2N60TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal
FQD2N80	FAIRCHILD	获取价格	800V N-Channel MOSFET
FQD2N80TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Met