是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X24 | 针数: | 24 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 1 week | 风险等级: | 5.51 |
Is Samacsys: | N | 其他特性: | UL RECOGNIZED |
外壳连接: | ISOLATED | 集电极-发射极最大电压: | 1200 V |
配置: | COMPLEX | JESD-30 代码: | R-XUFM-X24 |
元件数量: | 7 | 端子数量: | 24 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 620 ns | 标称接通时间 (ton): | 210 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FP25R12KT4B11BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor | |
FP25R12KT4B15BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-24 | |
FP25R12KT4BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MODULE-23 | |
FP25R12N2T7 | INFINEON |
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EconoPIM? 2?1200 V, 25 A three phase PIM IGBT module with TRENCHSTOP? IGBT7, Emitter Contr | |
FP25R12U1T4 | INFINEON |
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SmartPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / | |
FP25R12W1T7 | INFINEON |
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EasyPIM™ 1B 1200 V, 25 A集成三相输入整流器PIM(功率集成模块)I | |
FP25R12W1T7_B11 | INFINEON |
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PressFIT | |
FP25R12W1T7B11BPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FP25R12W2T4 | INFINEON |
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IGBT-Wechselrichter / IGBT-inverter | |
FP25R12W2T4_B11 | INFINEON |
获取价格 |
IGBT-Wechselrichter / IGBT-inverter Höchstzu |