是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 2.09 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FP25R12KT4B15BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-24 | |
FP25R12KT4BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, MODULE-23 | |
FP25R12N2T7 | INFINEON |
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EconoPIM? 2?1200 V, 25 A three phase PIM IGBT module with TRENCHSTOP? IGBT7, Emitter Contr | |
FP25R12U1T4 | INFINEON |
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SmartPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / | |
FP25R12W1T7 | INFINEON |
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EasyPIM™ 1B 1200 V, 25 A集成三相输入整流器PIM(功率集成模块)I | |
FP25R12W1T7_B11 | INFINEON |
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PressFIT | |
FP25R12W1T7B11BPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FP25R12W2T4 | INFINEON |
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IGBT-Wechselrichter / IGBT-inverter | |
FP25R12W2T4_B11 | INFINEON |
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IGBT-Wechselrichter / IGBT-inverter Höchstzu | |
FP25R12W2T4B11BOMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35 |