品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | 双极性晶体管 | |
页数 | 文件大小 | 规格书 |
21页 | 814K | |
描述 | ||
EconoPIM? 2?1200 V, 25 A three phase PIM IGBT module with TRENCHSTOP? IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FP25R12U1T4 | INFINEON |
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SmartPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / | |
FP25R12W1T7 | INFINEON |
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EasyPIM™ 1B 1200 V, 25 A集成三相输入整流器PIM(功率集成模块)I | |
FP25R12W1T7_B11 | INFINEON |
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PressFIT | |
FP25R12W1T7B11BPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FP25R12W2T4 | INFINEON |
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IGBT-Wechselrichter / IGBT-inverter | |
FP25R12W2T4_B11 | INFINEON |
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IGBT-Wechselrichter / IGBT-inverter Höchstzu | |
FP25R12W2T4B11BOMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35 | |
FP25R12W2T4BOMA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35 | |
FP25R12W2T4ENG | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FP25R12W2T4P | INFINEON |
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Insulated Gate Bipolar Transistor, |