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FMMTA64TA

更新时间: 2024-11-15 13:07:47
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管达林顿晶体管局域网
页数 文件大小 规格书
1页 43K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

FMMTA64TA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.47最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:30 V配置:DARLINGTON
最小直流电流增益 (hFE):20000JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz
Base Number Matches:1

FMMTA64TA 数据手册

  
SOT23 PNP SILICON PLANAR  
DARLINGTON TRANSISTOR  
ISSUE 3 – MARCH 2001  
FMMTA64  
PARTMARKING DETAIL –  
FMMTA64 - Z2V  
E
C
COMPLEMENTARY TYPES – FMMTA64 - FMMTA14  
B
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
ICM  
-30  
-30  
V
-10  
V
Peak Pulse Current  
-800  
mA  
mA  
mA  
mW  
°C  
Continuous Collector Current  
Peak Base Current  
IC  
-500  
IBM  
-200  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL  
FMMTA64  
UNIT  
CONDITIONS.  
MIN.  
MAX.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-30  
-30  
-10  
V
IC=-10µA, IE=0  
Collector-Emitter Breakdown  
Voltage  
V
IC=-10mA, IB=0*  
Emitter-Base Breakdown  
Voltage  
V
IE=-10µA, IC=0  
Collector Cut-Off  
Current  
-0.1  
-0.1  
VCB=-30V, IE=0  
µA  
µA  
Emitter Cut-Off Current  
IEBO  
hFE  
VCE=-10V  
Static Forward Current  
Transfer Ratio  
10K  
20K  
IC=-10mA, VCE=5V*  
IC=-100mA, VCE=5V*  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
VBE(sat)  
fT  
-1.5  
-2.0  
V
IC=-100mA, IB=-0.1mA*  
Base-Emitter  
Saturation Voltage  
V
IC=-100mA, IB=-0.1mA*  
Transition  
Frequency  
125  
MHz  
IC=-50mA, VCE=-5V  
f=20MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical characteristics graphs see FZTA64 datasheet.  
TBA  

FMMTA64TA 替代型号

型号 品牌 替代类型 描述 数据表
SMMBTA64LT1G ONSEMI

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