FMMTA92

更新时间： 2024-02-04 00:57:08

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管高压局域网
页数	文件大小	规格书
2页	74K
描述
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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FMMTA92 数据手册

SOT23 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

FMMTA92

ISSUE 4 - MARCH 2001

✪

PARTMARKING DETAILS:

–

FMMTA92 - 4E

–

FMMTA92R - 8E

COMPLEMENTARY TYPES:

–

FMMTA92 - FMMTA42

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

FMMTA92

UNIT

Collector-Base Voltage

-300

Collector-Emitter Voltage

Emitter-Base Voltage

-5

Continuous Collector Current

Power Dissipation at T_amb= 25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

-200

°C

P_tot

330

T_j:T_stg

-55 to +150

= 25°C).

amb

FMMTA92

PARAMETER

SYMBOL MIN.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-300

-5

I_C=-100µA, I_E=0

Collector-Emitter Breakdown

Voltage

I_C=-1mA, I_B=0*

I_E=-100µA, I_C=0

V_CB=-200V, I_E=0

Emitter-Base Breakdown

Voltage

Collector Cut-Off

Current

-0.25

µA

_CB=-160V, I_E=0-

Emitter Cut-Off Current

I_EBO

-0.1

-0.5

µA

V_EB=-3V, I_E=0

Collector-Emitter Saturation

Voltage

V_CE(sat)

I_C=-20mA, I_B=-2mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

h_FE

-0.9

Static Forward Current

Transfer Ratio

I_C=-1mA, V_CE=10V*

I_C=-10mA, V_CE=10V*

I_C=-30mA,V_CE=-10V*

Transition Frequency

Output Capacitance

f_T

MHz

I_C=-10mA, V_CE=-20V

f=20MHz

C_obo

V_CB=-20V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

TBA

中文翻译

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