Datasheet > FMMTA64

FMMTA64

更新时间： 2024-01-20 09:26:58

品牌	Logo	应用领域
爱特美尔 - ATMEL		晶体晶体管达林顿晶体管局域网
页数	文件大小	规格书
1页	52K
描述
SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS

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FMMTA64 数据手册

SOT23 PNP SILICON PLANAR

DARLINGTON TRANSISTORS

FMMTA63

FMMTA64

ISSUE 2 MARCH 1995

✪

PARTMARKING DETAIL

FMMTA63 - Z2U

FMMTA64 - Z2V

COMPLEMENTARY TYPES FMMTA63 - FMMTA13

FMMTA64 - FMMTA14

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_CM

-30

Collector-Emitter Voltage

Emitter-Base Voltage

-10

Peak Pulse Current

-800

°C

Continuous Collector Current

Peak Base Current

I_C

-500

I_BM

-200

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

P_tot

330

T_j:T_stg

= 25°C).

-55 to +150

amb

PARAMETER

SYMBOL

FMMTA63 FMMTA64

MIN. MAX. MIN. MAX.

UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-30

-10

-30

-10

I_C=-10µA, I_E=0

I_C=-10mA, I_B=0*

I_E=-10µA, I_C=0

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

-0.1

V_CB=-30V, I_E=0

µA

Emitter Cut-Off

Current

I_EBO

V_CE=-10V

Static Forward

Current Transfer Ratio

h_FE

10K

20K

I_C=-10mA, V_CE=5V*

I_C=-100mA, V_CE=5V*

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

f_T

-1.5

-2.0

-1.5

-2.0

I_C=-100mA, I_B=-0.1mA*

Base-Emitter

Saturation Voltage

I_C=-100mA, I_B=-0.1mA*

Transition

Frequency

125

MHz

I_C=-50mA, V_CE=-5V

f=20MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FZTA63 datasheet.

3 - 178

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