FMMT458TC

更新时间： 2024-11-14 13:07:51

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FMMT458TC 数据手册

SOT23 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

FMMT458

ISSUE 4 – APRIL 2002

FEATURES

400 Volt V_CEO

COMPLEMENTARY TYPE –

PARTMARKING DETAIL –

FMMT558

458

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

400

Collector-Emitter Voltage

Emitter-Base Voltage

400

225

Continuous Collector Current

Peak Pulse Current

I_CM

Base Current

I_B

200

°C

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

500

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

I_C=100µA

Collector-Base

V_(BR)CBO

400

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

V_CEO(sus)

V_(BR)EBO

I_C=10mA*

I_E=100µA

Collector Cut-Off Current

Emitter Cut-Off Current

I_CBO

I_CES

I_EBO

100

V_CB=320V

V_CE=320V

V_EB=4V

Collector-Emitter

Saturation Voltage

V_CE(sat)

0.2

0.5

I_C=20mA, I_B=2mA*

I_C=50mA, I_B=6mA*

Base-Emitter

V_BE(sat)

V_BE(on)

h_FE

0.9

I_C=50mA, I_B=5mA*

Saturation Voltage

Base-Emitter

Turn On Voltage

Static Forward

Current Transfer Ratio

0.9

I_C=50mA, V_CE=10V*

100

I_C=1mA, V_CE=10V

I_C=50mA, V_CE=10V*

I_C=100mA, V_CE=10V*

I_C=10mA, V_CE=20V

f=20MHz

300

Transition Frequency

f_T

MHz

Output Capacitance

Switching times

C_obo

t_on

t_off

V_CB=20V, f=1MHz

135 Typical

2260 Typical

I_C=50mA, V_CC=100V

I_B1=5mA, I_B2=-10mA

*Measured under pulsed conditions.

Spice parameter data is available upon request for this device

TBA

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FMMT458TC 替代型号

型号	品牌	替代类型	描述	数据表
FMMT458QTA	DIODES	功能相似	Small Signal Bipolar Transistor, 0.225A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, GREE
FMMT458TA	DIODES	功能相似	400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23
FMMT458	DIODES	功能相似	SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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