Datasheet > FMMT491

FMMT491

更新时间： 2024-11-14 10:34:51

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	569K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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FMMT491 数据手册

FMMT491

TRANSISTOR (NPN)

SOT-23

FEATURES

Low equivalent on-resistance

1. BASE

2. EMITTER

3. COLLECTOR

Marking :491

MAXIMUM RATINGS(T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

250

150

-55-150

T_j

℃

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=100μA,I_E=0

I_C=10mA,I_B=0

I_E=100μA,I_C=0

V_CB=60V,I_E=0

V_(BR)CEO

V_(BR)EBO

I_CBO

0.1

μA

Emitter cut-off current

I_EBO

V_EB=4V,I_C=0

h_FE(1)

V_CE=5V,I_C=1mA

V_CE=5V,I_C=500mA

V_CE=5V,I_C=1A

V_CE=5V,I_C=2A

I_C=500mA,I_B=50mA

I_C=1A,I_B=100mA

V_CE=5V,I_C=1A

100

h_FE(2)

300

DC current gain

h_FE(3)

h_FE(4)

V_CE(sat)1

V_CE(sat)2

V_BE(sat)

0.25

0.5

1.1

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

V_BE

Transition frequency

_CE=10V,I_C=50mA,,f=100MHz

150

MHz

f_T

Collector output capacitance

C_ob

V_CB=10V,f=1MHz

¹Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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