Datasheet > FMMT493

FMMT493

更新时间： 2024-10-30 10:34:51

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	391K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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FMMT493 数据手册

FMMT493

TRANSISTOR (NPN)

SOT–23

FEATURES

 Complementary Type FMMT593

MARKING:493

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

1. BASE

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

2. EMITTER

Collector-Base Voltage

120

3. COLLECTOR

Collector-Emitter Voltage

Emitter-Base Voltage

100

Collector Current

1000

250

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

P_C

R_ΘJA

T_j

500

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=100µA, I_E=0

V_(BR)CEOI_C=10mA, I_B=0

V_(BR)EBOI_E=100µA, I_C=0

120

100

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_CES

V_CB=100V, I_E=0

V_CES=100V, I_E=0

V_EB=4V, I_C=0

0.1

µA

Collector cut-off current

I_EBO

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

V_CE=10V, I_C=1mA

V_CE=10V, I_C=250mA

V_CE=10V, I_C=0.5A

V_CE=10V, I_C=1A

100

300

DC current gain

V_CE(sat)1

V_CE(sat)2

I_C=500mA, I_B=50mA

I_C=1A, I_B=100mA

0.3

0.6

1.15

Collector-emitter saturation voltage

V_BE(sat)

V_BE*

f_T

I_C=1A, I_B=100mA

Base-emitter saturation voltage

Base-emitter voltage

V_CE=10V, I_C=1A

V_CE=10V,I_C=50mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

150

MHz

Transition frequency

C_ob

Collector output capacitance

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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