Datasheet > FMMT489

FMMT489

更新时间： 2024-11-14 12:04:55

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	200K
描述
Very low equivalent on-resistance

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中文翻译

获取价格

数据手册

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FMMT489 数据手册

SSS

SMD Type

MMM

DDD

TTT

yyy

ppp

eee

Transistors

IIo

CCr

Product specification

FMMT489

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Very low equivalent on-resistance

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

Unit

Peak collector current

Collector current

I^C

200

Base current

I^B

Power dissipation

P^tot

500

Operating and storage temperature range

T^j,T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^CBO

I^C=100ìA

I^C=10mA

I^E=100ìA

V^CB=30V

V^EB=4V

100

Emitter cut-off current

I^EBO

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter voltage *

V^CE(sat)

V^BE(sat)

V^BE(ON)

0.3

I^C=1A,I^B=100mA

I^C=1A,V^CE=2V

I^C=1mA,V^CE=2V

I^C=1A,V^CE=2V

I^C=2A,V^CE=2V

I^C=4A,V^CE=2V

1.0

100

300

Static Forward Current Transfer Ratio*

h^FE

Current-gain-bandwidth product

Output capacitance

f^T

150

MHz

I^C=50mA,V^CE=10V,f=100MHz

V^CB=10V,f=1MHz

C^obo

* Pulse test: tp

300 ìs; d

0.02.

Marking

489

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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