5秒后页面跳转
FMMT489 PDF预览

FMMT489

更新时间: 2024-11-13 22:48:59
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管开关光电二极管局域网
页数 文件大小 规格书
1页 51K
描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FMMT489 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.28Is Samacsys:N
最大集电极电流 (IC):1 A基于收集器的最大容量:10 pF
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzVCEsat-Max:0.6 V
Base Number Matches:1

FMMT489 数据手册

  
SOT23 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
FMMT489  
ISSUE3 - OCTOBER 1995  
FEATURES  
*
Very low equivalent on-resistance; RCE(sat) 175mat 1A  
E
C
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FMMT589  
489  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
50  
Collector-Emitter Voltage  
30  
V
Emitter-Base Voltage  
5
V
Continuous Collector Current  
Peak Pulse Current  
1
4
A
ICM  
A
Base Current  
IB  
200  
mA  
mW  
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Ptot  
500  
Tj:Tstg  
= 25°C).  
-55 to +150  
amb  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
CONDITIONS.  
Breakdown Voltages  
V(BR)CBO  
VCEO(sus)  
V(BR)EBO  
ICBO  
50  
30  
5
V
IC=100µA  
IC=10mA*  
IE=100µA  
VCB=30V  
VCES=30V  
VEB=4V  
V
V
Collector Cut-Off Current  
Emitter Cut-Off Current  
100  
100  
100  
nA  
nA  
nA  
ICES  
IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.3  
0.6  
V
V
IC=1A, IB=100mA*  
IC=2A, IB=200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.1  
V
IC=1A, IB=100mA*  
Base-Emitter  
Turn On Voltage  
1.0  
V
IC=1A, VCE=2V*  
Static Forward Current  
Transfer Ratio  
100  
100  
60  
IC=1mA, VCE=2V*  
IC=1A, VCE=2V*  
IC=2A, VCE=2V*  
IC=4A, VCE=2V*  
300  
10  
20  
Transition Frequency  
fT  
150  
MHz  
pF  
IC=50mA, VCE=10V  
f=100MHz  
Collector-Base  
Breakdown Voltage  
Cobo  
VCB=10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical characteristics graphs see FMMT449 datasheet  
3 - 114  

与FMMT489相关器件

型号 品牌 获取价格 描述 数据表
FMMT489TA DIODES

获取价格

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FMMT489TC DIODES

获取价格

Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
FMMT491 TYSEMI

获取价格

Low equivalent on-resistance.
FMMT491 ZETEX

获取价格

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
FMMT491 BL Galaxy Electrical

获取价格

NPN Silicon Epitaxial Planar Transistor
FMMT491 DIODES

获取价格

Medium power NPN transistor in SOT23
FMMT491 MCC

获取价格

NPN Silicon Planar High Performance Transistor
FMMT491 HTSEMI

获取价格

TRANSISTOR (NPN)
FMMT491 RECTRON

获取价格

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
FMMT491 KEXIN

获取价格

Medium Power Transistor