Datasheet > FMMT449

FMMT449

更新时间： 2024-11-14 06:59:43

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管
页数	文件大小	规格书
1页	36K
描述
Medium Power Transistor

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中文翻译

获取价格

数据手册

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FMMT449 数据手册

SMD Type

TransistIoCrs

Medium Power Transistor

FMMT449

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low equivalent on-resistance.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

Unit

Peak collector current

Collector current

I^C

200

Base current

I^B

Power dissipation

P^tot

500

Operating and storage temperature range

T^j,Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

IC=1mA,IE=0

IC=10mA,IB=0

IE=100ìA,IC=0

V^CB=40V,IE=0

V^CB=40V,TamB=100

VEB=4V,IC=0

0.1

ìA

Collector cutoff current

I^CBO

Emitter cut-off current

I^EBO

0.1

0.5

1.0

I^C=1A,IB=100mA

I^C=2A,IB=200mA

Collector-emitter saturation voltage *

VCE(sat)

Base-emitter saturation voltage *

Base-emitter voltage *

V^BE(sat)

V^BE(ON)

1.25

1.0

IC=1A,IB=100mA

IC=1A,VCE=2V

100

I^C=50mA, VCE=2V*

I^C=500mA, VCE=2V*

I^C=1A, VCE=2V*

300

Static Forward Current Transfer Ratio

h^FE

I^C=2A, VCE=2V*

Current-gain-bandwidth product

Output capacitance

f^T

150

MHz

IC=50mA,VCE=10V,f=100MHz

VCB=10V,f=1MHz

C^obo

* Pulse width=300ìs. Duty cycle 2%

Marking

449

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与FMMT449相关器件

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FMMT449L99Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SUPERSOT-
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FMMT449-TP	MCC	获取价格	Small Signal Field-Effect Transistor,
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