Datasheet > FMMT451

FMMT451

更新时间： 2024-09-23 06:59:43

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管
页数	文件大小	规格书
1页	35K
描述
High Perfromance Transistor

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中文翻译

获取价格

数据手册

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FMMT451 数据手册

SMD Type

TransistIoCrs

High Perfromance Transistor

FMMT451

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low equivalent on-resistance.

1 Amp continuous current.

Ptot = 500mW.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

Unit

Peak collector current

Collector current

I^C

200

Base current

I^B

Power dissipation

P^tot

500

Operating and storage temperature range

T^j,Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

V(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^CBO

IC=100ìA

IC=10mA

IE=100ìA

VCB=60V

VEB=4V

0.1

ìA

Emitter cut-off current

I^EBO

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

V^CE(sat)

V^BE(sat)

0.35

1.1

I^C=150mA,IB=15mA

I^C=1A, VCE=10V

Static Forward Current Transfer Ratio *

h^FE

150

I^C=150mA,VCE=10V

Current-gain-bandwidth product

Output capacitance

f^T

150

MHz

IC=50mA,VCE=10V,f=100MHz

VCB=10V,f=1MHz

C^obo

* Pulse test: tp

300 ìs; d

0.02.

Marking

451

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