FMMT458

更新时间： 2024-11-13 22:48:59

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管开关光电二极管高压局域网
页数	文件大小	规格书
2页	132K
描述
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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FMMT458 数据手册

SOT23 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 OCTOBER 1995

FMMT458

FEATURES

400 Volt V_CEO

COMPLEMENTARY TYPE

PARTMARKING DETAIL

FMMT558

458

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

400

Collector-Emitter Voltage

400

Emitter-Base Voltage

225

Continuous Collector Current

Peak Pulse Current

I_CM

Base Current

I_B

200

°C

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

P_tot

500

T_j:T_stg

= 25°C).

-55 to +150

amb

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_CEO(sus)

V_(BR)EBO

400

I_C=100µA

I_C=10mA*

I_E=100µA

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

I_CBO

100

V_CB=320V

V_CE=320V

V_EB=4V

I_CES

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

0.2

0.5

I_C=20mA, I_B=2mA*

I_C=50mA, I_B=6mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

0.9

I_C=50mA, I_B=5mA*

Base-Emitter

Turn On Voltage

0.9

I_C=50mA, V_CE=10V*

Static Forward

Current Transfer Ratio

100

I_C=1mA, V_CE=10V

I_C=50mA, V_CE=10V*

I_C=100mA, V_CE=10V*

300

Transition Frequency

f_T

MHz

I_C=10mA, V_CE=20V

f=20MHz

Collector-Base

Breakdown Voltage

C_obo

V_CB=20V, f=1MHz

Switching times

t_on

t_off

135 Typical

2260 Typical

I_C=50mA, V_CC=100V

I_B1=5mA, I_B2=-10mA

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

3 - 112

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