Datasheet > FMMT455

FMMT455

更新时间： 2024-11-14 06:59:43

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	35K
描述
High Performance Transistor

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中文翻译

获取价格

数据手册

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FMMT455 数据手册

SMD Type

Transistors

High Performance Transistor

FMMT455

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

140 Volt VCEO

1 Amp continuous current

Ptot = 500 mW

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

Unit

160

140

Peak collector current

Collector current

I^C

200

Base current

I^B

Power dissipation

P^tot

500

Operating and storage temperature range

T^j,Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

160

140

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter sustaining voltage *

Emitter-base breakdown voltage

Collector cutoff current

V^(BR)CBO

V^CEO(sus)

V^(BR)EBO

I^CBO

IC=100ìA

IC=10mA

IE=100ìA

VCB=140V

VEB=4V

0.1

0.7

300

ìA

Emitter cut-off current

I^EBO

Collector-emitter saturation voltage *

V^CE(sat)

I^C=150mA,IB=15mA

100

I^C=150mA,VCE=10V *

I^C=1A, VCE=10V*

Static Forward Current Transfer Ratio

h^FE

Transition frequency

Output capacitance

f^T

MHz

IC=50mA,VCE=10V,f=100MHz

VCB=10V, IE=0, f=1MHz

C^obo

* Pulse test: tp = 300 ìs; d

0.02.

Marking

455

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