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FMMT451

更新时间: 2024-11-14 12:33:39
品牌 Logo 应用领域
TYSEMI 晶体晶体管光电二极管
页数 文件大小 规格书
1页 192K
描述
Low equivalent on-resistance, 1 Amp continuous current.

FMMT451 数据手册

  
TT  
Transistors  
rr  
aa  
nn  
ss  
ii  
ss  
tt  
IIo  
                                                  
CCr  
                                                   
ss  
Product specification  
FMMT451  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Low equivalent on-resistance.  
1 Amp continuous current.  
Ptot = 500mW.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Rating  
Unit  
V
80  
60  
V
5
V
Peak collector current  
Collector current  
2
A
IC  
1
200  
A
Base current  
IB  
mA  
mW  
Power dissipation  
Ptot  
500  
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
80  
60  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage *  
Emitter-base breakdown voltage  
Collector cutoff current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=100ìA  
V
IC=10mA  
IE=100ìA  
VCB=60V  
VEB=4V  
V
0.1  
0.1  
ìA  
ìA  
V
Emitter cut-off current  
IEBO  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
VCE(sat)  
VBE(sat)  
0.35  
1.1  
IC=150mA,IB=15mA  
IC=150mA,IB=15mA  
IC=1A, VCE=10V  
V
10  
Static Forward Current Transfer Ratio *  
hFE  
50  
150  
15  
IC=150mA,VCE=10V  
Current-gain-bandwidth product  
Output capacitance  
fT  
150  
MHz  
pF  
IC=50mA,VCE=10V,f=100MHz  
VCB=10V,f=1MHz  
Cobo  
* Pulse test: tp  
300 ìs; d  
0.02.  
Marking  
Marking  
451  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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