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FMMT449TC PDF预览

FMMT449TC

更新时间: 2024-11-14 13:01:11
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管光电二极管局域网
页数 文件大小 规格书
2页 122K
描述
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,

FMMT449TC 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.33
最大集电极电流 (IC):1 A基于收集器的最大容量:15 pF
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzVCEsat-Max:1 V
Base Number Matches:1

FMMT449TC 数据手册

 浏览型号FMMT449TC的Datasheet PDF文件第2页 
SOT23 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
ISSUE 3 - NOVEMBER 1995  
FMMT449  
FEATURES  
*
Low equivalent on-resistance; RCE(sat) 250mat 1A  
E
C
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FMMT549  
449  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
50  
Collector-Emitter Voltage  
Emitter-Base Voltage  
30  
V
5
V
Peak Pulse Current  
2
1
A
Continuous Collector Current  
Base Current  
IC  
A
IB  
200  
mA  
mW  
°C  
Power Dissipation at Tamb= 25°C  
Operating and Storage Temperature Range  
Ptot  
500  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN. MAX.  
UNIT  
V
CONDITIONS.  
IC=1mA, IE=0  
Collector-Base  
Breakdown Voltage  
50  
30  
5
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V
V
IC=10mA, IB=0*  
Emitter-Base Breakdown V(BR)EBO  
Voltage  
IE=100µA, IC=0  
Collector Cut-Off  
Current  
ICBO  
0.1  
10  
V
CB=40V, IE=0  
µA  
µA  
VCB=40V, Tamb=100°C  
Emitter Cut-Off Current  
IEBO  
0.1  
VEB=4V, IC=0  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.5  
1.0  
V
V
IC=1A, IB=100mA*  
IC=2A, IB=200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.25  
V
IC=1A, IB=100mA*  
Base-Emitter Turn-On  
Voltage  
1.0  
V
IC=1A, VCE=2V*  
Static Forward Current  
Transfer Ratio  
70  
100  
80  
IC=50mA, VCE=2V*  
IC=500mA, VCE=2V*  
IC=1A, VCE=2V*  
300  
15  
40  
IC=2A, VCE=2V*  
Transition  
Frequency  
fT  
150  
MHz  
pF  
IC=50mA, VCE=10V  
f=100mHz  
Output Capacitance  
Cobo  
VCB=10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 106  

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