Datasheet > FMMT449S62Z

FMMT449S62Z

更新时间： 2024-01-24 06:10:06

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		光电二极管晶体管
页数	文件大小	规格书
3页	27K
描述
Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SUPERSOT-3

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技术参数
数据手册

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FMMT449S62Z 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.34
最大集电极电流 (IC)：	1 A	集电极-发射极最大电压：	30 V
配置：	SINGLE	最小直流电流增益 (hFE)：	40
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	150 MHz
Base Number Matches：	1

FMMT449S62Z 数据手册

FMMT449

SuperSOT^TM-3

NPN Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 2A

continuous. Sourced from Process NB.

Absolute Maximum Ratings*

T_{A = 25°C unless otherwise noted}

FMMT449

Symbol

Parameter

Units

Collector-Emitter Voltage

V_CEO

Collector-Base Voltage

Emitter-Base Voltage

V_CBO

V_EBO

Collector Current - Continuous

I_C

- Peak Pulse Current

Operating and Storage Junction Temperature Range

-55 to +150

°C

T_J,T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

T_{A = 25°C unless otherwise noted}

Max

Characteristic

Symbol

Units

FMMT449

Total Device Dissipation*

Derate above 25°C

500

mW/°C

P_D

Thermal Resistance, Junction to Ambient

250

°C/W

R_qJA

*Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in²of 2oz copper.

1998Fairchild Semiconducto Corporation

Page 1 of 2

fmmt449.lwpPrNB revA

12 3

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