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FMMT449 PDF预览

FMMT449

更新时间: 2024-11-14 04:18:43
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 晶体晶体管光电二极管
页数 文件大小 规格书
4页 196K
描述
NPN Silicon Planar Medium Power Transistor

FMMT449 数据手册

 浏览型号FMMT449的Datasheet PDF文件第2页浏览型号FMMT449的Datasheet PDF文件第3页浏览型号FMMT449的Datasheet PDF文件第4页 
BL Galaxy Electrical  
Production specification  
NPN Silicon Planar Medium Power Transistor  
FMMT449  
FEATURES  
Pb  
z
Low equivalent on-resistance,RCE(sat)  
:
Lead-free  
250mat 1A.  
z
Complementary To FMMT549.  
APPLICATIONS  
z
NPN silicon planar medium power transistor.  
SOT-23  
ORDERING INFORMATION  
Type No.  
Marking  
449  
Package Code  
SOT-23  
FMMT449  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
50  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
30  
V
5
V
2
A
Collector Current -Continuous  
Base Current  
IC  
1
A
IB  
200  
500  
mA  
mW  
Power Dissipation  
Ptot  
Junction and Storage Temperature  
TjTstg  
-55~150  
Document number: BL/SSSTC051  
Rev.A  
www.galaxycn.com  
1

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