Datasheet > FMMT4403

FMMT4403

更新时间： 2024-11-13 22:48:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管局域网
页数	文件大小	规格书
2页	33K
描述
SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTOR

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数据手册

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FMMT4403 数据手册

SOT23 PNP SILICON PLANAR

FMMT4402

FMMT4403

GENERAL PURPOSE TRANSISTOR

✪

ISSUE 2 - MARCH 1995

PARTMARKING DETAILS:

FMMT4402 - 2K

FMMT4403 - 2L

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

-40

Collector-Emitter Voltage

Emitter-Base Voltage

-5

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

-600

P_tot

330

°C

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

FMMT4402

MIN. MAX.

-40

FMMT4403

MIN.

-40

MAX.

PARAMETER

SYMBOL

V_(BR)CEO

CONDITIONS

IC=-1mA, I_B=0

UNIT

Collector-Emitter

Breakdown Voltage

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)EBO

I_CEX

-40

-5

-40

-5

I_C=-0.1mA, I_E=0

IE=-0.1mA, I_C=0

Emitter-Base

Breakdown Current

Collector-Emitter

Cut-Off Current

-0.1

V_CE=-35V

V_EB(off)=-0.4V

µA

Base Cut-Off

Current

I_BEX

V_CE=-35V

V_EB(off)=-0.4V

Static Forward

Current

TransferRatio

h_FE

100

I_C=-0.1mA, V_CE=-1V

I_C=-1mA, V_CE=-1V

I_C=-10mA, V_CE=-1V

I_C=-150mA,V_CE=-2V*

I_C=-500mA,V_CE=-2V*

150

300

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

f_T

-0.4

-0.75

-0.4

-0.75

I_C=-150mA,I_B=-15mA*

I_C=-500mA,I_B=-50mA*

Base-Emitter

Saturation Voltage

-0.75 -0.95

-1.3

-0.75

200

-0.95

-1.3

I_C=-150mA,I_B=-15mA*

I_C=-500mA,I_B=-50mA

Transition

Frequency

150

8.5

MHz I_C=-20mA,V_CE=-10V

f=100MHz

Output Capacitance C_obo

Input Capacitance C_ibo

8.5

pF V_CB=-10 V,I_E=0

f=100kHz

pF V_BE=0.5V

I_C=0, f=100kHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

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