Datasheet > FMMT449

FMMT449

更新时间： 2023-12-06 20:10:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	679K
描述
SOT-23

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中文翻译

获取价格

数据手册

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FMMT449 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

FMMT449

TRANSISTOR (NPN)

SOT–23

FEATURES

 Low Equivalent On-Resistance

MARKING: 449

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

1. BASE

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

2. EMITTER

3. COLLECTOR

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

200

625

℃/W

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBO

I_C=1mA, I_E=0

Collector-base breakdown voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=10mA, I_B=0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=100µA, I_C=0

V_CB=40V, I_E=0

0.1

µA

I_EBO

V_EB=4V, I_C=0

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

V_CE=2V, I_C=50mA

V_CE=2V, I_C=500mA

V_CE=2V, I_C=1A

100

300

DC current gain

V_CE=2V, I_C=2A

V_CE(sat)1

V_CE(sat)2

I_C=1A, I_B=100mA

I_C=2A, I_B=200mA

I_C=1A, I_B=100mA

V_CE=2V, I_C=1A

0.5

Collector-emitter saturation voltage

V_BE(sat)

1.25

Base-emitter saturation voltage

Base-emitter voltage

V_BE*

V_CE=10V,I_C=50mA,

f=100MHz

f_T

150

MHz

Transition frequency

C_ob

V_CB=10V, I_E=0, f=1MHz

Collector output capacitance

*Pulse test

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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