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FMB857B

更新时间： 2024-01-20 17:07:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
2页 100K
描述
PNP Epitaxial Silicon Transistor

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FMB857B 数据手册

 浏览型号FMB857B的Datasheet PDF文件第2页 
September 2007  
FMB857B  
PNP Epitaxial Silicon Transistor  
•
•
This device is designed for general purpose amplifier application at collector currents to 300mA.  
Sourced from process 68.  
C2  
E1  
C1  
SSOT-6  
B2  
Mark: .N2  
Dot denotes pin #1  
pin #1  
E2  
B1  
Absolute Maximum Ratings TC=25°C unless otherwise noted  
Symbol Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
50  
V
VCEO  
VEBO  
IC  
45  
V
5
V
500  
mA  
°C  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 ~ 150  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Max.  
Units  
PD  
Total Device Dissipation  
Derate above 25°C  
700  
5.6  
mW  
mW/°C  
RθJA  
Thermal Resistance, Junction to Ambient  
180  
°C/W  
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.  
Electrical Characteristics TC=25°C unless otherwise noted  
Symbol  
BVCBO  
Parameter  
Test Condition  
IC = 10μA  
Min. Typ. Max.  
Units  
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Cutoff Voltage  
50  
45  
5
BVCEO  
IC = 1mA  
V
BVEBO  
IE = 10μA  
V
BVCEX  
IC = 10μA, VBE = 1V  
50  
nA  
VCB = 30V, T = 25°C  
T =150°C  
15  
4000  
ICBO  
Collector Cut-off Current  
DC Current Gain  
nA  
hFE  
VCE = 5V, IC = 2mA  
220  
0.6  
475  
IC = 10 mA, IB = 0.5 mA  
IC = 100 mA, IB = 5 mA  
0.3  
0.65  
VCE(sat)  
Collector-Emitter Saturation Voltage  
V
V
VCE = 5V, IC = 2mA  
VCE = 5V, IC = 10mA  
0.75  
0.82  
VBE(on)  
Base-Emitter On Voltage  
NOTES: All voltages (V) and currents (A) are negative polarity for PNP transistors.  
© 2007 Fairchild Semiconductor Corporation  
FMB857B Rev. 1.0.0  
www.fairchildsemi.com  
1
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