Datasheet > FMBBAS19

FMBBAS19

更新时间： 2024-01-19 19:31:13

品牌	Logo	应用领域
戈采 - FCI		二极管局域网
页数	文件大小	规格书
1页	57K
描述
200 mW EPITAXIAL PLANAR DIODES

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FMBBAS19 数据手册

Data Sheet

200 mW EPITAXIAL

PLANAR DIODES

Mechanical Dimensions

Description

.110

.060

Pin 3

.016

Pin 1 NC

.037

.115

.037

Pin 2

.043

.016

.004

Features

n INDUSTRY STANDARD SOT-23

PACKAGE

n PLANAR PROCESS

n 200 mW POWER DISSIPATION

n MEETS UL SPECIFICATION 94V-0

Electrical Characteristics @ 25^OC.

FMBBAS19...21

Units

Maximum Ratings

FMBBAS19

FMBBAS20

FMBBAS21

Peak Reverse Voltage...V_RM

RMS Reverse Voltage...V_R(rms)

Volts

120

100

200

150

250

200

Average Forward Rectified Current...I_O

............................................. 625 ............................................... mAmps

............................................. 2.5 ...............................................

Amps

Non-Repetitive Peak Forward Surge Current...I_FSM

............................................. 1.0 ...............................................

Volts

Forward Voltage...V_F

@ I_F= 100 mA

............................................. 0.1 ...............................................

DC Reverse Current...I_R@ V_R= 70V

Power Dissipation...P_D

µAmps

............................................. 200 ...............................................

............................................. 50 ...............................................

Reverse Recovery Time...t_RR

......................................... -25 to 85 ..........................................

Operating Temperature Range...T_J

Storage Temperature Range...T_STRG

°C

......................................... -65 to 150 ..........................................

°C

Device Under Test

.01 uF

Output

0.1 I_R

P_VV= 100nS

Trr

I_F

5K Ohms

I_R

50 Ohms

R_G= 50 Ohms

Page 10-25

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