Datasheet > FMBBAV70

FMBBAV70

更新时间： 2024-01-16 08:48:27

品牌	Logo	应用领域
戈采 - FCI		二极管局域网
页数	文件大小	规格书
1页	57K
描述
200 mW EPITAXIAL PLANAR DIODES

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中文翻译

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数据手册

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FMBBAV70 数据手册

Data Sheet

200 mW EPITAXIAL

PLANAR DIODES

Mechanical Dimensions

Description

.110

.060

Pin 2

Pin 1

.016

.037

.115

Pin 3

.037

.043

.016

.004

Features

n INDUSTRY STANDARD SOT-23

PACKAGE

n PLANAR PROCESS

n 200 mW POWER DISSIPATION

n MEETS UL SPECIFICATION 94V-0

Electrical Characteristics @ 25^OC.

FMBBAV70

Units

Maximum Ratings

FMBBAV70

Peak Reverse Voltage...V_RM

RMS Reverse Voltage...V_R(rms)

Volts

Average Forward Rectified Current...I_O

mAmps

............................................. 625 ...............................................

Non-Repetitive Peak Forward Surge Current...I_FSM

............................................. 4.0 ............................................... Amps

Forward Voltage...V_F

@ I_F= 100 mA

............................................. 1.0 ...............................................

Volts

DC Reverse Current...I_R@ V_R= 70V

Power Dissipation...P_D

............................................. 0.1 ...............................................

............................................. 200 ...............................................

............................................. 1.5 ...............................................

............................................. 4.0 ...............................................

......................................... -25 to 85 ..........................................

......................................... -65 to 150 ..........................................

µAmps

Typical Junction Capacitance...C_J

Reverse Recovery Time...t_RR

Operating Temperature Range...T_J

Storage Temperature Range...T_STRG

°C

Device Under Test

.01 uF

Output

0.1 I_R

P_VV= 100nS

Trr

I_F

5K Ohms

I_R

50 Ohms

R_G= 50 Ohms

Page 10-26

中文翻译

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