5秒后页面跳转
FMBA56 PDF预览

FMBA56

更新时间: 2024-01-09 22:24:48
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
4页 45K
描述
PNP Multi-Chip General Purpose Amplifier

FMBA56 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SSOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:7.69
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

FMBA56 数据手册

 浏览型号FMBA56的Datasheet PDF文件第2页浏览型号FMBA56的Datasheet PDF文件第3页浏览型号FMBA56的Datasheet PDF文件第4页 
Discr ete P OWER & Sign a l  
Tech n ologies  
FMBA56  
C2  
E1  
C1  
B2  
E2  
B1  
pin #1  
SuperSOT -6  
Mark: .2G  
PNP Multi-Chip General Purpose Amplifier  
This device is designed for general purpose amplifier applications at collector  
currents to 300 mA. Sourced from Process 73.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCES  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
80  
80  
V
V
4.0  
V
Collector Current - Continuous  
500  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
FMBA56  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
700  
5.6  
180  
mW  
mW/°C  
°C/W  
RθJA  
1998 Fairchild Semiconductor Corporation  

FMBA56 替代型号

型号 品牌 替代类型 描述 数据表
FMBSA56 FAIRCHILD

完全替代

PNP General Purpose Amplifier

与FMBA56相关器件

型号 品牌 获取价格 描述 数据表
FMBA56D84Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSO
FMBA56D87Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSO
FMBA56L99Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSO
FMBA56S62Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSO
FMBB SCHURTER

获取价格

AC Filter 2-Stage, Broad Band Attenuation
FMBB EP SCHURTER

获取价格

AC Filter 2-Stage
FMBB NEO SCHURTER

获取价格

AC Filter 2-Stage
FMBB RAIL SCHURTER

获取价格

AC Filter 2-Stage
FMBB4148 FCI

获取价格

200 mW EPITAXIAL PLANAR DIODES
FMBB914 FCI

获取价格

200 mW EPITAXIAL PLANAR DIODES