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FMBA56L99Z PDF预览

FMBA56L99Z

更新时间: 2024-02-23 08:41:17
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
5页 50K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSOT-6

FMBA56L99Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.55Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

FMBA56L99Z 数据手册

 浏览型号FMBA56L99Z的Datasheet PDF文件第2页浏览型号FMBA56L99Z的Datasheet PDF文件第3页浏览型号FMBA56L99Z的Datasheet PDF文件第4页浏览型号FMBA56L99Z的Datasheet PDF文件第5页 
FMBA56  
C2  
E1  
C1  
B2  
E2  
B1  
pin #1  
SuperSOT -6  
Mark: .2G  
Dot denotes pin #1  
PNP Multi-Chip General Purpose Amplifier  
This device is designed for general purpose amplifier applications at collector  
currents to 300 mA. Sourced from Process 73.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCES  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
80  
80  
V
V
4.0  
V
4
Collector Current - Continuous  
500  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
FMBA56  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
700  
5.6  
180  
mW  
mW/°C  
°C/W  
RθJA  
1998 Fairchild Semiconductor Corporation  

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