Datasheet > FMBA14D84Z

FMBA14D84Z

更新时间： 2024-01-04 08:09:48

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器光电二极管晶体管
页数	文件大小	规格书
4页	54K
描述
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon, SUPERSOT-6

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技术参数
数据手册

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FMBA14D84Z 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.78	最大集电极电流 (IC)：	1.2 A
集电极-发射极最大电压：	30 V	配置：	2 BANKS, DARLINGTON
最小直流电流增益 (hFE)：	20000	JESD-30 代码：	R-PDSO-G6
元件数量：	2	端子数量：	6
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	200 MHz
Base Number Matches：	1

FMBA14D84Z 数据手册

FMBA14

pin #1

SuperSOT -6

Mark: .1N

Dot denotes pin #1

NPN Multi-Chip Darlington Transistor

This device is designed for applications requiring extremely high current

gain at collector currents to 1.0 A. Sourced from Process 05.

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CES

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

1.2

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

T_A= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

FMBA14

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

700

5.6

180

mW/°C

°C/W

R_θJA

1998 Fairchild Semiconductor Corporation

12 3 4

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