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FJNS4205R PDF预览

FJNS4205R

更新时间: 2024-09-19 22:32:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
4页 69K
描述
PNP Epitaxial Silicon Transistor

FJNS4205R 技术参数

生命周期:Obsolete零件包装代码:TO-92S
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:BUILT IN BIAS RESISTOR RATIO 2.12最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

FJNS4205R 数据手册

 浏览型号FJNS4205R的Datasheet PDF文件第2页浏览型号FJNS4205R的Datasheet PDF文件第3页浏览型号FJNS4205R的Datasheet PDF文件第4页 
FJNS4205R  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R =4.7K, R =10K)  
1
2
Complement to FJNS3205R  
TO-92S  
1.Emitter 2. Collector 3. Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Equivalent Circuit  
Symbol  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Value  
Units  
C
V
-50  
V
CBO  
CEO  
EBO  
V
V
-50  
V
R1  
-10  
V
B
I
-100  
300  
mA  
mW  
°C  
C
R2  
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
E
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-50  
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I = -10µA, I =0  
CBO  
CEO  
C
E
BV  
I = -100µA, I =0  
-50  
V
C
B
I
V
= -40V, I =0  
-0.1  
-0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
= -5V, I = -5mA  
30  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I = -10mA, I = -0.5mA  
V
CE  
C
B
C
V
= -10V, I =0  
5.5  
pF  
ob  
CB  
E
f=1.0MHz  
f
Current Gain Bandwidth Product  
Input Off Voltage  
V
V
V
= -10V, I = -5mA  
200  
MHz  
V
T
CE  
CE  
CE  
C
V (off)  
= -5V, I = -100µA  
-0.3  
I
C
V (on)  
Input On Voltage  
= -0.3V, I = -20mA  
-2.5  
6.2  
V
I
C
R
Input Resistor  
3.2  
4.7  
KΩ  
1
R /R  
Resistor Ratio  
0.42  
0.47  
0.52  
1
2
©2002 Fairchild Semiconductor Corporation  
Rev. A, July 2002  

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