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FJNS4210R PDF预览

FJNS4210R

更新时间: 2024-11-09 22:32:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
4页 34K
描述
PNP Epitaxial Silicon Transistor

FJNS4210R 数据手册

 浏览型号FJNS4210R的Datasheet PDF文件第2页浏览型号FJNS4210R的Datasheet PDF文件第3页浏览型号FJNS4210R的Datasheet PDF文件第4页 
FJNS4210R  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R=10K)  
Complement to FJNS3210R  
TO-92S  
1
1.Emitter 2. Collector 3. Base  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Equivalent Circuit  
C
Symbol  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Value  
Units  
V
-40  
V
CBO  
CEO  
EBO  
V
V
-40  
V
R
-5  
V
B
I
-100  
300  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
E
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-40  
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I = -100µA, I =0  
CBO  
CEO  
C
E
BV  
I = -1mA, I =0  
-40  
V
E
B
I
V
= -30V, I =0  
-0.1  
600  
-0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
= -5V, I = -1mA  
100  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I = -10mA, I = -1mA  
V
CE  
C
B
C
V
= -10V, I =0  
5.5  
pF  
ob  
CB  
E
f=1MHz  
f
Current Gain Bandwidth Product  
Input Resistor  
V
= -10V, I = -5mA  
200  
10  
MHz  
T
CE  
C
R
7
13  
KΩ  
©2002 Fairchild Semiconductor Corporation  
Rev. A, August 2002  

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