Datasheet > FJNS4210R

FJNS4210R

更新时间： 2024-09-19 22:32:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	34K
描述
PNP Epitaxial Silicon Transistor

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FJNS4210R 数据手册

FJNS4210R

Switching Application ^{(Bias Resistor Built In)}

•

Switching circuit, Inverter, Interface circuit, Driver Circuit

Built in bias Resistor (R=10KΩ)

Complement to FJNS3210R

TO-92S

1.Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Equivalent Circuit

Symbol

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value

Units

-40

CBO

CEO

EBO

-40

-5

-100

300

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

-40

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

I = -100µA, I =0

CBO

CEO

I = -1mA, I =0

-40

= -30V, I =0

-0.1

600

-0.3

µA

CBO

DC Current Gain

= -5V, I = -1mA

100

(sat)

Collector-Emitter Saturation Voltage

Output Capacitance

I = -10mA, I = -1mA

= -10V, I =0

5.5

f=1MHz

Current Gain Bandwidth Product

Input Resistor

= -10V, I = -5mA

200

MHz

KΩ

Rev. A, August 2002

12 3 4

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