FJNS4208RBU

更新时间： 2024-11-10 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	38K
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数据手册

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FJNS4208RBU 数据手册

FJNS4208R

Switching Application (Bias Resistor Built In)

•

Switching circuit, Inverter, Interface circuit, Driver Circuit

Built in bias Resistor (R =47KΩ, R =22KΩ)

Complement to FJNS3208R

TO-92S

1.Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Equivalent Circuit

Symbol

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value

Units

-50

CBO

CEO

EBO

-50

-10

-100

300

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

-50

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

I = -10µA, I =0

CBO

CEO

I = -100µA, I =0

-50

= -40V, I =0

-0.1

-0.3

µA

CBO

DC Current Gain

= -5V, I = -5mA

(sat)

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

I = -10mA, I = -0.5mA

= -10V, I = -5mA

200

5.5

MHz

= -10V, I =0

f=1.0MHz

V (off)

Input Off Voltage

Input On Voltage

Input Resistor

= -5V, I = -100µA

-0.8

V (on)

= -0.3V, I = -2mA

-4

2.4

KΩ

R /R

Resistor Ratio

1.9

2.1

Rev. A, August 2002

12 3 4

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