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FJNS4208RBU PDF预览

FJNS4208RBU

更新时间: 2024-11-08 13:07:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
4页 38K
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FJNS4208RBU 数据手册

 浏览型号FJNS4208RBU的Datasheet PDF文件第2页浏览型号FJNS4208RBU的Datasheet PDF文件第3页浏览型号FJNS4208RBU的Datasheet PDF文件第4页 
FJNS4208R  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R =47K, R =22K)  
1
2
Complement to FJNS3208R  
TO-92S  
1
1.Emitter 2. Collector 3. Base  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Equivalent Circuit  
C
Symbol  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Value  
Units  
V
-50  
V
CBO  
CEO  
EBO  
V
V
-50  
V
R1  
-10  
V
B
I
-100  
300  
mA  
mW  
°C  
C
R2  
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
E
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-50  
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I = -10µA, I =0  
CBO  
CEO  
C
E
BV  
I = -100µA, I =0  
-50  
V
C
B
I
V
= -40V, I =0  
-0.1  
-0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
= -5V, I = -5mA  
56  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -10mA, I = -0.5mA  
V
CE  
C
B
f
V
= -10V, I = -5mA  
200  
5.5  
MHz  
pF  
T
CE  
C
C
V
= -10V, I =0  
E
ob  
CB  
f=1.0MHz  
V (off)  
Input Off Voltage  
Input On Voltage  
Input Resistor  
V
V
= -5V, I = -100µA  
-0.8  
V
V
I
CE  
CE  
C
V (on)  
= -0.3V, I = -2mA  
-4  
62  
2.4  
I
C
R
32  
47  
KΩ  
1
R /R  
Resistor Ratio  
1.9  
2.1  
1
2
©2002 Fairchild Semiconductor Corporation  
Rev. A, August 2002  

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