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FGW25N120VD PDF预览

FGW25N120VD

更新时间： 2024-11-02 12:21:47
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
8页 679K
描述
Discrete IGBT (High-Speed V series) 1200V / 25A

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FGW25N120VD 数据手册

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http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGW25N120VD  
Discrete IGBT (High-Speed V series)  
1200V / 25A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness (RBSOA, SCSOA etc.)  
Applications  
Inverter for Motor drive  
AC and DC Servo drive amplifier  
Uninterruptible power supply  
Maximum Ratings and Characteristics  
Equivalent circuit  
Collector  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols Characteristics Units  
Remarks  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1200  
±20  
48  
V
V
A
A
A
A
A
A
A
V
GES  
IC@25  
IC@100  
I
CP  
T
T
C
C
=25°C, T  
j
=150°C  
DC Collector Current  
25  
50  
50  
42  
25  
50  
=100°C, T=150°C  
j
Pulsed Collector Current  
Note *1  
CE≤1200V, T≤175°C  
Turn-Off Safe Operating Area  
-
V
j
Gate  
I
I
I
F@25  
Diode Forward Current  
Diode Pulsed Current  
F@100  
FP  
Note *1  
V
CC≤640V, VGE=15V  
≤150°C  
=25°C  
=25°C  
Short Circuit Withstand Time  
t
SC  
10  
μs  
Emitter  
T
T
T
j
IGBT Max. Power Dissipation  
FWD Max. Power Dissipation  
P
P
D_IGBT  
D_FWD  
260  
155  
C
C
W
Operating Junction Temperature T  
j
-40~+175  
-55~+175  
°C  
°C  
Storage Temperature  
Tstg  
Note *1 : Pulse width limited by Tjmax.  
Electrical characteristics (at T  
j
= 25°C unless otherwise specified)  
Symbols Conditions  
Characteristics  
Items  
Unit  
min.  
1200  
typ.  
-
-
max.  
Collector-Emitter Breakdown Voltage  
Zero Gate Voltage Collector Current  
V
(BR)CES  
I
C
= 50μA, VGE = 0V  
CE = 1200V, VGE = 0V  
CE = 0V, VGE = ±20V  
-
250  
2
V
µA  
mA  
nA  
V
T
T
j
j
=25°C  
=175°C  
-
-
-
I
CES  
V
-
Gate-Emitter Leakage Current  
Gate-Emitter Threshold Voltage  
I
GES  
V
V
-
200  
7.0  
2.4  
-
VGE (th)  
CE = +20V, I  
C
= 25mA  
6.0  
6.5  
1.85  
2.4  
1750  
105  
80  
T
T
j
j
=25°C  
=175°C  
-
-
-
-
-
Collector-Emitter Saturation Voltage  
V
CE (sat)  
V
GE = +15V, I  
C
= 25A  
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE=25V  
GE=0V  
-
-
-
oes  
res  
pF  
f=1MHz  
V
CC = 600V  
Gate Charge  
Q
G
I
C
= 25A  
GE = 15V  
= 25°C  
CC = 600V  
= 25A  
-
235  
-
nC  
ns  
V
T
V
I
V
j
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
32  
45  
235  
50  
-
-
-
-
-
r
C
d(off)  
f
GE = 15V  
R
G
= 10Ω  
Turn-On Energy  
E
on  
2.2  
L = 500μH  
mJ  
ns  
Energy loss include “tail” and FWD reverse  
recovery.  
Turn-Off Energy  
E
off  
-
1.4  
-
T
V
j
= 175°C  
CC = 600V  
= 25A  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
35  
50  
300  
80  
-
-
-
-
-
r
I
C
d(off)  
f
VGE = 15V  
RG = 10Ω  
Turn-On Energy  
E
on  
3.5  
L = 500μH  
mJ  
Energy loss include “tail” and FWD reverse  
recovery.  
Turn-Off Energy  
E
off  
-
2.4  
-
T
j
=25°C  
=175°C  
-
-
1.7  
1.8  
2.21  
-
V
V
Forward Voltage Drop  
V
F
IF=25A  
T
j
V
CC=30V  
= 2.5A  
Diode Reverse Recovery Time  
Diode Reverse Recovery Time  
t
rr1  
I
F
-
72  
94  
ns  
-di/dt=200A/µs  
V
CC=600V  
t
rr2  
-
-
0.30  
1.20  
-
-
µs  
I
F
=25A  
-di /dt=200A/µs  
F
Diode Reverse Recovery Charge  
Q
rr  
µC  
Tj  
=25°C  
1
12345678

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