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FGW25N120WE PDF预览

FGW25N120WE

更新时间： 2024-11-03 15:19:35
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
9页 364K
描述
Molded Package TO-247-P2

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FGW25N120WE 数据手册

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http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGW25N120WE  
Discrete IGBT (High-Speed W series)  
1200V / 25A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness (RBSOA, SCSOA etc.)  
Applications  
Uninterruptible power supply  
PV Power coditionner  
Inverter welding machine  
Maximum Ratings and Characteristics  
Equivalent circuit  
Collector  
Absolute Maximum Ratings at T=25°C (unless otherwise specified)  
j
Items  
Symbol Characteristics Unit  
Remarks  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1200  
±20  
40  
V
V
A
A
A
A
A
A
A
V
GES  
IC@25  
IC@100  
I
CP  
T
T
C
C
=25°C, T  
j
=150°C  
DC Collector Current  
25  
=100°C, T=150°C  
j
Pulsed Collector Current  
100  
100  
40  
25  
100  
Note *1  
CE≤1200V, T≤175°C  
Turn-Off Safe Operating Area  
-
V
j
Gate  
I
I
I
F@25  
Diode Forward Current  
Diode Pulsed Current  
F@100  
FP  
Note *1  
V
CC≤600V, VGE=15V  
≤150°C  
=25°C  
=25°C  
Short Circuit Withstand Time  
t
SC  
5
μs  
W
Emitter  
T
T
T
j
IGBT Max. Power Dissipation  
FWD Max. Power Dissipation  
P
P
D_IGBT  
D_FWD  
270  
125  
C
C
Operating Junction Temperature T  
j
-40 ~ +175  
-55 ~ +175  
°C  
°C  
Storage Temperature  
T
stg  
Note *1 : Pulse width limited by Tjmax.  
Electrical characteristics at T  
Description  
j
= 25°C (unless otherwise specified) Static Characteristics  
Symbol Conditions  
min.  
-
-
-
typ.  
-
-
max.  
250  
Unit  
µA  
mA  
nA  
V
T
j
=25°C  
=175°C  
Zero Gate Voltage Collector Current  
I
I
CES  
V
CE = 1200V, VGE = 0V  
Tj  
2
200  
7.0  
2.6  
-
-
-
-
Gate-Emitter Leakage Current  
Gate-Emitter Threshold Voltage  
GES  
V
V
CE = 0V, VGE = ±20V  
CE = 20V, I  
-
V
GE (th)  
C
= 25mA  
= 25A  
5.0  
6.0  
2.0  
2.6  
1650  
75  
23  
T
T
j
j
=25°C  
=175°C  
-
-
-
-
-
Collector-Emitter Saturation Voltage  
V
CE (sat)  
VGE = 15V, I  
C
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE=25V  
GE=0V  
oes  
res  
pF  
f=1MHz  
VCC = 400V  
Gate Charge  
Q
G
I
C
= 25A  
GE = 15V  
= 25°C  
CC = 600V  
= 25A  
-
80  
-
nC  
ns  
V
T
V
I
V
j
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
28  
44  
122  
32  
-
-
-
-
-
r
C
d(off)  
f
GE = 15V  
R
G
= 10Ω  
Turn-On Energy  
E
on  
1.3  
L = 500μH  
Energy loss include “tail” and FWD  
(FDRW20S120J) reverse recovery.  
mJ  
ns  
Turn-Off Energy  
E
off  
-
0.9  
-
T
V
j
= 175°C  
CC = 600V  
= 25A  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
28  
42  
178  
60  
-
-
-
-
-
r
I
C
d(off)  
f
VGE = 15V  
RG = 10Ω  
Turn-On Energy  
E
on  
2.5  
L = 500μH  
Energy loss include “tail” and FWD  
(FDRW20S120J) reverse recovery.  
mJ  
Turn-Off Energy  
E
off  
-
1.5  
-
T
j
=25°C  
=175°C  
-
-
-
2.30  
2.00  
0.38  
3.22  
-
-
V
V
ns  
Forward Voltage Drop  
V
F
I =25A  
F
T
j
VCC=600V  
Diode Reverse Recovery Time  
t
rr  
IF  
= 25A  
Diode Reverse Recovery Charge  
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
Q
rr  
-di/dt=600A/µs  
-
-
-
1.6  
0.76  
4.8  
-
-
-
µC  
µs  
Tj  
=25°C  
VCC=600V  
trr  
IF  
=25A  
Qrr  
-diF/dt=600A/µs  
µC  
Tj  
=175°C  
8830a  
SEPTEMBER 2016  
1
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