5秒后页面跳转
捷配首页

Datasheet > FGW25N120WD
FGW25N120WD PDF预览

FGW25N120WD

更新时间： 2024-11-03 17:00:47
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
9页 398K
描述
Molded Package TO-247-P

阅读下载

中文翻译

获取价格

FGW25N120WD 数据手册

 浏览型号FGW25N120WD的Datasheet PDF文件第2页浏览型号FGW25N120WD的Datasheet PDF文件第3页浏览型号FGW25N120WD的Datasheet PDF文件第4页浏览型号FGW25N120WD的Datasheet PDF文件第5页浏览型号FGW25N120WD的Datasheet PDF文件第6页浏览型号FGW25N120WD的Datasheet PDF文件第7页 
http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGW25N120WD  
Discrete IGBT (High-Speed W series)  
1200V / 25A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness (RBSOA, SCSOA etc.)  
Applications  
Uninterruptible power supply  
PV Power coditionner  
Inverter welding machine  
Maximum Ratings and Characteristics  
Equivalent circuit  
Collector  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols Characteristics Units  
Remarks  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1200  
±20  
40  
V
V
A
A
A
A
A
A
A
V
GES  
IC@25  
IC@100  
I
CP  
T
T
C
C
=25°C, T  
j
=150°C  
DC Collector Current  
25  
=100°C, T=150°C  
j
Pulsed Collector Current  
100  
100  
22  
12  
100  
Note *1  
CE≤1200V, T≤175°C  
Turn-Off Safe Operating Area  
-
V
j
Gate  
I
I
I
F@25  
Diode Forward Current  
Diode Pulsed Current  
F@100  
FP  
Note *1  
V
CC≤600V, VGE=15V  
≤150°C  
=25°C  
=25°C  
Short Circuit Withstand Time  
t
SC  
5
μs  
W
Emitter  
T
T
T
j
IGBT Max. Power Dissipation  
FWD Max. Power Dissipation  
P
P
D_IGBT  
D_FWD  
270  
75  
C
C
Operating Junction Temperature T  
j
-40 ~ +175  
-55 ~ +175  
°C  
°C  
Storage Temperature  
T
stg  
Note *1 : Pulse width limited by Tjmax.  
Electrical characteristics (at T  
j
= 25°C unless otherwise specified)  
Symbols Conditions  
Characteristics  
Description  
Unit  
min.  
typ.  
-
max.  
250  
T
T
j
j
=25°C  
=175°C  
-
-
-
µA  
mA  
nA  
V
Zero Gate Voltage Collector Current  
ICES  
VCE = 1200V, VGE = 0V  
-
-
2
200  
7.0  
2.6  
-
Gate-Emitter Leakage Current  
Gate-Emitter Threshold Voltage  
I
V
GES  
V
V
CE = 0V, VGE = ±20V  
GE (th)  
CE = 20V, I  
C
= 25mA  
= 25A  
5.0  
6.0  
2.0  
2.6  
1650  
75  
23  
T
T
j
j
=25°C  
=175°C  
-
-
-
-
-
Collector-Emitter Saturation Voltage  
V
CE (sat)  
VGE = 15V, I  
C
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE=25V  
GE=0V  
-
-
-
oes  
res  
pF  
f=1MHz  
VCC = 400V  
Gate Charge  
Q
G
I
C
= 25A  
GE = 15V  
= 25°C  
CC = 600V  
= 25A  
-
80  
-
nC  
ns  
V
T
V
I
V
j
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
28  
32  
122  
32  
-
-
-
-
-
r
C
d(off)  
f
GE = 15V  
R
G
= 10Ω  
Turn-On Energy  
E
on  
0.9  
L = 500μH  
Energy loss include “tail” and FWD  
(FDRW12S120J) reverse recovery.  
mJ  
ns  
Turn-Off Energy  
E
off  
-
1.3  
-
T
V
j
= 150°C  
CC = 600V  
= 25A  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
28  
32  
178  
60  
-
-
-
-
-
r
I
C
d(off)  
f
VGE = 15V  
RG = 10Ω  
Turn-On Energy  
E
on  
1.5  
L = 500μH  
Energy loss include “tail” and FWD  
(FDRW12S120J) reverse recovery.  
mJ  
Turn-Off Energy  
E
off  
-
2.2  
-
T
j
=25°C  
=175°C  
-
-
2.2  
1.8  
2.8  
-
V
V
Forward Voltage Drop  
V
F
IF=12A  
T
j
VCC=30V  
Diode Reverse Recovery Time  
Diode Reverse Recovery Time  
t
rr1  
I
F
= 1.2A  
-
33  
-
ns  
-di/dt=200A/µs  
V
CC=600V  
=12A  
t
rr2  
-
-
0.30  
0.60  
-
-
µs  
IF  
-di /dt=200A/µs  
T
F
Diode Reverse Recovery Charge  
Q
rr  
µC  
j
=25°C  
8566a  
SEPTEMBER 2016  
1
1234567...9

中文翻译

下载PDF

与FGW25N120WD相关器件

型号 品牌 获取价格 描述 数据表
FGW25N120WE FUJI

获取价格

 		Molded Package TO-247-P2
FGW30N120H FUJI

获取价格

 		Discrete IGBT (High-Speed V series) 1200V / 30A
FGW30N120HD FUJI

获取价格

 		Discrete IGBT (High-Speed V series) 1200V / 30A
FGW30N60VD FUJI

获取价格

 		Discrete IGBT (High-Speed V series) 600V / 30A
FGW30N65W FUJI

获取价格

 		Molded Package TO-247
FGW30XS65 FUJI

获取价格

 		Molded Package TO-247-P2
FGW30XS65C FUJI

获取价格

 		Molded Package TO-247-P2
FGW35N60H FUJI

获取价格

 		Discrete IGBT (High-Speed V series) 600V / 35A
FGW35N60HD FUJI

获取价格

 		Discrete IGBT (High-Speed V series) 600V / 35A
FGW40N120H FUJI

获取价格

 		Discrete IGBT (High-Speed V series) 1200V / 40A

与FGW25N120WD相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证