Datasheet > FGA15N120

FGA15N120

更新时间： 2024-11-07 07:08:15

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
9页	843K
描述
FGA15N120ANTD ，1200V NPT Trench IGBT

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中文翻译

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FGA15N120 数据手册

Tel: 0755-83264115

Fax:0755-83955172

URL: http://w.ww.qsdaz.com

May 2006

FGA15N120ANTD

1200V NPT Trench IGBT

Features

Description

•

NPT Trench Technology, Positive temperature coefficient

Using Fairchild's proprietary trench design and advanced NPT

technology, the 1200V NPT IGBT offers superior conduction

and switching performances, high avalanche ruggedness and

easy parallel operation.

•

Low saturation voltage: V_{CE(sat), typ}= 1.9V

@ I_C= 15A and T_C= 25°C

•

Low switching loss: E_{off, typ}= 0.6mJ

@ I_C= 15A and T_C= 25°C

This device is well suited for the resonant or soft switching appli-

cation such as induction heating, microwave oven, etc.

Extremely enhanced avalanche capability

TO-3P

Absolute Maximum Ratings

Symbol

Description

FGA15N120ANTD

Units

V_CES

V_GES

I_C

Collector-Emitter Voltage

Gate-Emitter Voltage

1200

± 20

Collector Current

@ T_C

25°C

Collector Current

@ T_C= 100°C

I_CM

I_F

Pulsed Collector Current (Note 1)

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

@ T_C= 100°C

I_FM

P_D

@ T_C

25°C

186

°C

@ T_C= 100°C

T_J

-55 to +150

300

T_stg

T_L

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case for IGBT

Thermal Resistance, Junction-to-Case for Diode

Thermal Resistance, Junction-to-Ambient

0.67

2.88

°C/W

Notes:

(1) Repetitive rating: Pulse width limited by max. junction temperature

FGA15N120ANTD Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

中文翻译

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