Datasheet > FGA20N120FTDTU

FGA20N120FTDTU

更新时间： 2024-09-19 11:13:55

品牌	Logo	应用领域
安森美 - ONSEMI		PC 栅双极性晶体管
页数	文件大小	规格书
11页	414K
描述
IGBT，1200V，20A，场截止沟槽

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FGA20N120FTDTU 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	11 weeks	风险等级：	1.37
Samacsys Confidence：	4	Samacsys Status：	Released
Samacsys PartID：	167296	Samacsys Pin Count：	3
Samacsys Part Category：	Transistor IGBT	Samacsys Package Category：	Transistor Outline, Vertical
Samacsys Footprint Name：	TO-3P 3L	Samacsys Released Date：	2019-06-20 15:45:07
Is Samacsys：	N	最大集电极电流 (IC)：	40 A
集电极-发射极最大电压：	1200 V	最大降落时间（tf）：	320 ns
门极发射器阈值电压最大值：	7.5 V	门极-发射极最大电压：	25 V
JESD-609代码：	e3	最高工作温度：	150 °C
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	298 W	子类别：	Insulated Gate BIP Transistors
表面贴装：	NO	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

FGA20N120FTDTU 数据手册

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

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与FGA20N120FTDTU相关器件

型号	品牌	获取价格	描述	数据表
FGA20S120M	FAIRCHILD	获取价格	1200V, 20A Shorted-Anode IGBT
FGA20S125P	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 1250V V(BR)CES, N-Channel, ROHS COMPLIANT, PL
FGA20S125P-SN00336	ONSEMI	获取价格	IGBT，1250V，20A，短路阳极
FGA20S140P	FAIRCHILD	获取价格	Shorted AnodeTM IGBT
FGA20S140P	ONSEMI	获取价格	IGBT，1400V，20A，短路阳极
FGA25N120AN	FAIRCHILD	获取价格	IGBT
FGA25N120AND	FAIRCHILD	获取价格	IGBT
FGA25N120ANDTU	FAIRCHILD	获取价格	暂无描述
FGA25N120ANTD	FAIRCHILD	获取价格	1200V NPT Trench IGBT
FGA25N120ANTD_07	FAIRCHILD	获取价格	1200V NPT Trench IGBT

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