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FGA15N120ANTDTU PDF预览

FGA15N120ANTDTU

更新时间: 2024-11-07 12:28:31
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页数 文件大小 规格书
10页 938K
描述
NPT Trench Technology, Positive temperature coefficient

FGA15N120ANTDTU 数据手册

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May 2006  
FGA15N120ANTD / FGA15N120ANTD_F109  
tm  
1200V NPT Trench IGBT  
Features  
Description  
NPT Trench Technology, Positive temperature coefficient  
Using Fairchild's proprietary trench design and advanced NPT  
technology, the 1200V NPT IGBT offers superior conduction  
and switching performances, high avalanche ruggedness and  
easy parallel operation.  
Low saturation voltage: VCE(sat), typ = 1.9V  
@ IC = 15A and TC = 25°C  
Low switching loss: Eoff, typ = 0.6mJ  
@ IC = 15A and TC = 25°C  
This device is well suited for the resonant or soft switching appli-  
cation such as induction heating, microwave oven, etc.  
Extremely enhanced avalanche capability  
C
G
TO-3P  
G
C
E
E
Absolute Maximum Ratings  
Symbol  
Description  
FGA15N120ANTD  
Units  
V
VCES  
VGES  
IC  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
1200  
± 20  
V
Collector Current  
@ TC  
=
25°C  
30  
A
Collector Current  
@ TC = 100°C  
15  
A
ICM  
IF  
Pulsed Collector Current (Note 1)  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
45  
15  
A
@ TC = 100°C  
A
IFM  
PD  
45  
A
@ TC  
=
25°C  
186  
W
W
°C  
°C  
°C  
@ TC = 100°C  
74  
TJ  
-55 to +150  
-55 to +150  
300  
Tstg  
TL  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθJC  
RθJA  
Thermal Resistance, Junction-to-Case for IGBT  
Thermal Resistance, Junction-to-Case for Diode  
Thermal Resistance, Junction-to-Ambient  
--  
--  
--  
0.67  
2.88  
40  
°C/W  
°C/W  
°C/W  
Notes:  
(1) Repetitive rating: Pulse width limited by max. junction temperature  
©2007 Fairchild Semiconductor Corporation  
1
www.fairchildsemi.com  
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1  

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