Datasheet > FGA180N33AT

FGA180N33AT

更新时间： 2024-11-07 03:36:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		光电二极管双极性晶体管
页数	文件大小	规格书
8页	664K
描述
330V, 180A PDP Trench IGBT

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数据手册

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FGA180N33AT 数据手册

April 2008

FGA180N33AT

330V, 180A PDP Trench IGBT

Features

General Description

•

High Current Capability

Using Novel Trench IGBT Technology, Fairchild’s new series of

trench IGBTs offer the optimum performance for PDP applica-

tions where low conduction and switching losses are essential.

Low saturation voltage: V_CE(sat)=1.03V @ I_C= 40A

High input impedance

RoHS compliant

Applications

PDP SYSTEM

TO-3P

G C E

Absolute Maximum Ratings

Symbol

Description

Ratings

330

Units

V_CES

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current

V_GES

± 30

@ T_C= 25^oC

180

I_C

@ T_C= 25^oC

@ T_C= 100^oC

I_{C pulse (1)}

Pulsed Collector Current

450

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

390

^oC

P_D

156

T_J

-55 to +150

T_stg

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

^oC

T_L

300

Notes:

1: Repetitive test, pulse width = 100usec, Duty = 0.1

* I pulse limited by max Tj

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

0.32

Units

^oC/W

R_θJC(IGBT)

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

FGA180N33AT Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

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