Datasheet > FGA180N33ATD_13

FGA180N33ATD_13

更新时间： 2024-11-07 12:33:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		光电二极管双极性晶体管
页数	文件大小	规格书
9页	655K
描述
330 V PDP Trench IGBT

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中文翻译

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数据手册

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FGA180N33ATD_13 数据手册

April 2013

FGA180N33ATD

330 V PDP Trench IGBT

Features

General Description

•

High Current Capability

Low Saturation Voltage: V

High Input Impedance

RoHS Complaint

Using novel trench IGBT Technology, Fairchild ’s new series of

trench IGBTs offer the optimum performance for PDP TV appli-

cations where low conduction and switching losses are essen-

tial.

= 1.68 V @ I = 180 A

CE(sat)

Applications

•

PDP TV

TO-3P

G D S

Absolute Maximum Ratings

Symbol

Description

Ratings

330

Unit

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current

CES

GES

@ T = 25 C

180

Pulsed Collector Current

450

CM (1)

@ T = 25 C

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

@ T = 25 C

390

@ T = 100 C

156

-55 to +150

stg

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

Notes:

1: Repetitive test, pulse width = 100usec, Duty = 0.1

* I pulse limited by max Tj

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

0.32

0.82

Unit

(IGBT)

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

C/W

θJC

θJA

(Diode)

C/W

FGA180N33ATD Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7...9

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