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FDW2502 PDF预览

FDW2502

更新时间: 2024-11-18 22:31:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 452K
描述
Dual P-Channel 2.5V Specified PowerTrench MOSFET

FDW2502 数据手册

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May 2000  
PRELIMINARY  
FDW2502P  
Dual P-Channel 2.5V Specified PowerTrenchÒ MOSFET  
General Description  
Features  
This P-Channel 2.5V specified MOSFET is a rugged  
gate version of Fairchild's Semiconductor’s advanced  
PowerTrench process. It has been optimized for power  
management applications with a wide range of gate  
drive voltage (2.5V –12V).  
·
–4.4 A, –20 V. RDS(ON) = 0.035 W @ VGS = –4.5 V  
RDS(ON) = 0.057 W @ VGS = –2.5 V.  
·
·
Extended VGSS range (±12V) for battery applications.  
High performance trench technology for extremely  
Applications  
low RDS(ON)  
.
·
·
·
·
Load switch  
Motor drive  
·
Low profile TSSOP-8 package.  
DC/DC conversion  
Power management  
1
2
3
4
8
7
6
5
TSSOP-8  
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
–20  
Units  
V
V
A
VGSS  
Gate-Source Voltage  
±12  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
–4.4  
–30  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
1.0  
W
0.6  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
125  
208  
RqJA  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
2502P  
FDW2502P  
13’’  
12mm  
3000 units  
FDW2502P Rev. C1 (W)  
Ó 2000 Fairchild Semiconductor Corporation  

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