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FDW2503NZ PDF预览

FDW2503NZ

更新时间: 2024-11-18 22:14:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 74K
描述
Dual N-Channel 2.5V Specified PowerTrench MOSFET

FDW2503NZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSSOP
包装说明:TSSOP-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.3配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):5.5 A
最大漏极电流 (ID):5.5 A最大漏源导通电阻:0.02 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.6 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDW2503NZ 数据手册

 浏览型号FDW2503NZ的Datasheet PDF文件第2页浏览型号FDW2503NZ的Datasheet PDF文件第3页浏览型号FDW2503NZ的Datasheet PDF文件第4页浏览型号FDW2503NZ的Datasheet PDF文件第5页 
October 2001  
FDW2503NZ  
Dual N-Channel 2.5V Specified PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel 2.5V specified MOSFET is a rugged  
gate version of Fairchild Semiconductor’s advanced  
PowerTrench process. It has been optimized for power  
management applications with a wide range of gate  
drive voltage (2.5V – 12V).  
· 5.5 A, 20 V. RDS(ON) = 20 mW @ VGS = 4.5V  
RDS(ON) = 26 mW @ VGS = 2.5V  
· Extended VGSS range (±12V) for battery applications  
· ESD protection diode (note 3)  
Applications  
· Load switch  
· High performance trench technology for extremely  
low RDS(ON)  
· Motor drive  
· DC/DC conversion  
· Power management  
· Low profile TSSOP-8 package  
1
2
3
4
8
7
6
5
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
20  
V
V
A
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
±12  
(Note 1a)  
5.5  
30  
PD  
Power Dissipation  
(Note 1a)  
(Note 1b)  
1.0  
W
0.6  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
RqJA  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
100  
125  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
2503NZ  
FDW2503NZ  
13’’  
12mm  
3000 units  
Ó2001 Fairchild Semiconductor Corporation  
FDW2503NZ Rev C(W)  

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