Datasheet > FDW2504P_08

FDW2504P_08

更新时间： 2024-11-19 03:36:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	225K
描述
Dual P-Channel 2.5V Specified PowerTrench MOSFET

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FDW2504P_08 数据手册

July 2008

FDW2504P

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V – 12V).

• –3.8 A, –20 V, R_DS(ON)= 0.043 Ω @ V_GS= –4.5 V

R_DS(ON)= 0.070 Ω @ V_GS= –2.5 V

• Extended V_GSSrange (±12V) for battery applications

• Low gate charge

Applications

• Load switch

• High performance trench technology for extremely

low R_DS(ON)

• Motor drive

• DC/DC conversion

• Power management

• Low profile TSSOP-8 package

TSSOP-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–20

Units

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±12

(Note 1)

–3.8

–30

1.0

P_D

Power Dissipation

(Note 1a)

(Note 1b)

0.6

T_J, T_STG

Operating and Storage Junction Temperature Range

°C

–55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

125

208

R_θJA

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

2504P

FDW2504P

13’’

12mm

2500 units

FDW2504P Rev. E1 (W)

2008 Fairchild Semiconductor Corporation

12 3 4 5

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